vertical anisotropic etching

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• vertical anisotropic etching — stačiasis anizotropinis ėsdinimas statusas T sritis radioelektronika atitikmenys: angl. vertical anisotropic etching vok. vertikales anisotropes Ätzen, n rus. вертикальное анизотропное травление, n pranc. décapage vertical anisotrope, m …   Radioelektronikos terminų žodynas

• vertical anisotropic etching isolation — izoliavimas stačiai anizotropiškai ėsdintais grioveliais statusas T sritis radioelektronika atitikmenys: angl. vertical anisotropic etching isolation vok. Isolation mittels vertikaler anisotroper Ätzgraben, f rus. изоляция канавками,… …   Radioelektronikos terminų žodynas

• Etching (microfabrication) — Etching tanks used to perform Piranha, Hydrofluoric acid or RCA clean on 4 inch wafer batches at LAAS technological facility in Toulouse, France Etching is used in microfabrication to chemically remove layers from the surface of a wafer during… …   Wikipedia

• isolation par rainures formées par décapage vertical anisotrope — izoliavimas stačiai anizotropiškai ėsdintais grioveliais statusas T sritis radioelektronika atitikmenys: angl. vertical anisotropic etching isolation vok. Isolation mittels vertikaler anisotroper Ätzgraben, f rus. изоляция канавками,… …   Radioelektronikos terminų žodynas

• décapage vertical anisotrope — stačiasis anizotropinis ėsdinimas statusas T sritis radioelektronika atitikmenys: angl. vertical anisotropic etching vok. vertikales anisotropes Ätzen, n rus. вертикальное анизотропное травление, n pranc. décapage vertical anisotrope, m …   Radioelektronikos terminų žodynas

• Isotropic etching — In semiconductor technology isotropic etching is non directional removal of material from a substrate via a chemical process using an etchant substance. The etchant may be a corrosive liquid or a chemically active ionized gas, known as a… …   Wikipedia

• Dry etching — refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of reactive gases such as fluorocarbons, oxygen, chlorine, boron trichloride; sometimes… …   Wikipedia

• Deep reactive-ion etching — (DRIE) is a highly anisotropic etch process used to create deep penetration, steep sided holes and trenches in wafers, with aspect ratios of 20:1 or more. It was developed for microelectromechanical systems (MEMS), which require these features,… …   Wikipedia

• Reactive-ion etching — (RIE) is an etching technology used in microfabrication. It uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High energy ions from the plasma… …   Wikipedia

• Isolation mittels vertikaler anisotroper Ätzgraben — izoliavimas stačiai anizotropiškai ėsdintais grioveliais statusas T sritis radioelektronika atitikmenys: angl. vertical anisotropic etching isolation vok. Isolation mittels vertikaler anisotroper Ätzgraben, f rus. изоляция канавками,… …   Radioelektronikos terminų žodynas

• izoliavimas stačiai anizotropiškai ėsdintais grioveliais — statusas T sritis radioelektronika atitikmenys: angl. vertical anisotropic etching isolation vok. Isolation mittels vertikaler anisotroper Ätzgraben, f rus. изоляция канавками, сформированными вертикальным анизотропным травлением, f pranc.… …   Radioelektronikos terminų žodynas